AO3401 p-chan nel enhanceme n t mode field ef fect t r ansistor maximum ratings ( t a =25 unless otherw ise noted) paramete r symbol v alue unit drain-sourc e voltag e v ds -30 v gate-source vo ltag e v gs 12 v continuo us dr ain current i d -4.2 a pow e r dissipation p d 350 mw thermal resist ance from jun ction to ambient ( t<5s )r ja 357 /w junction t emperature t j 150 storage te mperature t stg -55~+ 150 v (br) dss r ds(on) max i d -30 v ? 65 m @-10v ? -4.2 a 90m @-2.5 v ? ? 75m @-4.5 v ? 1. ga te 2. source 3. drain 1 2 3 a e j l t op view m b c h g d d k sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.85 0.80 0 8 all dimensions in mm AO3401(4.2a) p-channel mosfet 1 of 3 a l l d a t a s h e e t . c o m
paramete r sy mbol test condition min typ max unit off characte r istics drain-sourc e breakdown voltage v (b r)dss v gs = 0v, i d =- 250 a -30 v zero gate volt a ge drain current i d ss v ds =-24v,v gs = 0 v -1 a gate-source le akag e current i gss v gs = 12v, v ds = 0v 100 na on ch aracteri stics v gs =-10v, i d =-4.2a 65 m ? v gs =-4.5v, i d =-4a 75 m ? drain-sourc e on-resistance (note 1) r ds (on) v gs =-2.5v,i d =-1a 90 m? for w ard tranconductance (note 1) g fs v ds =-5v, i d =-5 a 7 s gate threshold voltage v gs(t h) v ds =v gs , i d =- 250 a -0.7 -1.3 v dy n amic characteristics (note 2) input capa citan ce c iss 954 pf output capacitance c oss 115 pf reverse transfer capac itanc e c rss v ds =-15v,v gs =0v,f =1 mhz 77 pf sw itch ing characteristics (note 2) tu rn-on dela y time t d(on) 6.3 ns t u rn-on rise time t r 3.2 ns tu rn-off delay time t d(o f f) 38.2 ns t u rn-off fall t i me t f v gs =- 10v,v ds =-15v, r l =3.6 ? ,r gen =6 ? 12 ns drain - so u r ce diode characteristics and maximum ratings diod e for w ar d voltag e (note 1) v sd i s =-1 a ,v gs =0 v -1 v note : 1. pulse t est : pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify. mosfet electrical characteristics a t =25 unless otherwise specified 2 of 3 a l l d a t a s h e e t . c o m
-0 -1 -2 -3 -4 -5 -0 -5 -10 -1 5 -20 -25 -0 -2 -4 -6 -8 -1 0 0 30 60 90 120 150 180 -0 -2 -4 -6 -8 0 30 60 90 120 150 180 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -0 -1 -2 -3 -4 -5 -0.0 -0 .2 -0.4 -0.6 -0.8 -1.0 -1.2 -1e-5 -1e-4 -1e-3 -0.01 -0.1 -1 -10 t a =25 puls ed t a =25 puls ed v gs =- 10v v gs =- 4.5v v gs =- 3.0v v gs =-2.5v v gs =-2.0v ou t put characteristics drain current i d (a) ddain to source voltage v ds (v) t a =25 pulsed i d =-2a ?? v gs r ds( on) on - resistance r ds( o n) (m ) gate to source voltage v gs (v) t a =25 pulsed i d ?? r ds( on) v gs =-10v v gs =-2.5v v gs =-4.5v t a =25 pulsed drain current i d (a) o n - resistance r ds( o n) (m ) tr an sfer characteristics drain current i d (a) gate to source voltage v gs (v) v sd ?? i s source current i s (a) source to drain voltage v sd (v) t ypical characteristics 3 of 3 a l l d a t a s h e e t . c o m
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